Electronic Packaging Science and Technology. King-Ning TuЧитать онлайн книгу.
7.8 Thermal Problems in IC and Package 7.9 Signal Integrity and Power Integrity (SI/PI) 7.10 Robustness: Reliability and Variability Problems References 8 2.5D/3D System‐in‐Packaging Integration 8.1 Introduction 8.2 2.5D IC: Redistribution Layer (RDL) and TSV‐Interposer 8.3 2.5D IC: Silicon, Glass, and Organic Substrates 8.4 2.5D IC: HBM on Silicon Interposer 8.5 3D IC: Memory Bandwidth Challenge for High‐Performance Computing 8.6 3D IC: Electrical and Thermal TSVs 8.7 3D IC: 3D‐Stacked Memory and Integrated Memory Controller 8.8 Innovative Packaging for Modern Chips/Chiplets 8.9 Power Distribution for 3D IC Integration 8.10 Challenge and Trend Problems References
8 Part III: 9 Irreversible Processes in Electronic Packaging Technology 9.1 Introduction 9.2 Flow in Open Systems 9.3 Entropy Production 9.4 Cross‐Effects in Irreversible Processes 9.5 Cross‐Effect Between Atomic Diffusion and Electrical Conduction 9.6 Irreversible Processes in Thermomigration 9.7 Cross‐Effect Between Heat Conduction and Electrical Conduction Problems References 10 Electromigration 10.1 Introduction 10.2 To Compare the Parameters in Atomic Diffusion and Electric Conduction 10.3 Basic of Electromigration 10.4 Current Crowding and Electromigration in 3‐Dimensional Circuits 10.5 Joule Heating and Heat Dissipation Problems References 11 Thermomigration 11.1 Introduction 11.2 Driving Force of Thermomigration 11.3 Analysis of Heat of Transport, Q* 11.4 Thermomigration Due to Heat Transfer Between Neighboring Pairs of Powered and Unpowered Solder Joints Problems References 12 Stress‐Migration 12.1 Introduction 12.2 Chemical Potential in a Stressed Solid 12.3 Stoney’s Equation of Biaxial Stress in Thin Films 12.4 Diffusional Creep 12.5 Spontaneous Sn Whisker Growth at Room Temperature 12.6 Comparison of Driving Forces Among Electromigration, Thermomigration, and Stress‐Migration Problems References 13 Failure Analysis 13.1 Introduction 13.2 Microstructure Change with or Without Lattice Shift 13.3 Statistical Analysis of Failure 13.4 A Unified Model of MTTF for Electromigration, Thermomigration, and Stress‐Migration 13.5 Failure Analysis in Mobile Technology Problems References 14 Artificial Intelligence in Electronic Packaging Reliability 14.1 Introduction 14.2 To Change Time‐Dependent Event to Time‐Independent Event 14.3 To Deduce MTTF from Mean Microstructure Change to Failure 14.4 Summary
9 Index
List of Tables
1 Chapter 1Table 1.1 5G technical requirements.
2 Chapter 2Table 2.1 Cu surface diffusivity (cm2/sec).
3 Chapter 6Table 6.1 Ideal scaling of MOS transistors.Table 6.2 Scaling of local and global interconnections.Table 6.3 Intel’s P856 Interconnect dimensions (0.25 um process).
4 Chapter 10Table 10.1 Comparison between atomic flux and electron flux.Table 10.2 Diffusivity at 100 °C.
List of Illustrations
1 Chapter 1Figure 1.1 A sketch of the achievements of 2D IC of Si technology according